INFLUENCE OF PULSED LASER RADIATION ON ELECTRICAL AND MAGNETORESISTIVE PROPERTIES OF La2/3Sr1/3MnO3 FILMS

被引：0

作者：

Cerniuke, I. ^{[1
]}

Vengalis, B. ^{[1
]}

Anisimovas, F. ^{[1
]}

Maneikis, A. ^{[1
]}

Grigaliunaite-Vonseviciene, G. ^{[2
]}

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, Gostauto 11, LT-01108 Vilnius, Lithuania

[2] Vilnius Gediminas Tech Univ, LT-10223 Vilnius, Lithuania

来源：

5TH INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIALS: FUNDAMENTALS AND APPLICATIONS 2014 | 2014年

关键词：

LSMO thin films; magnetoresistance; laser-induced defects;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report modification of electrical and magnetoresistive properties for the La2/3Sr1/3MnO3/MgO(100) thin films influenced by high power pulsed (tau congruent to 10 ns) laser radiation (lambda = 532 nm). SEM surface study revealed cracks extended along [100] directions and partially melted material at film surface with radiation power increasing. Low field magnetoresistance typical for high quality intergrain junctions has been measured at T< 240 K for the films with laser beam-induced cracks while partial melting of the material resulted increased electrical resistance, lowering of the paramagnetic to ferromagnetic transition temperature T-C and reduced magmetoresistance values in the vicinity of T-C.

引用

页码：286 / +

页数：2

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