Effects of CF4 content on particle densities and reaction pathways in atmospheric-pressure Ar/CF4 pulsed dielectric barrier discharge plasma

被引:20
作者
Bai, Chengjie [1 ]
Wang, Lijuan [1 ]
Wan, Honglin [1 ]
Li, Li [2 ]
Liu, Liping [2 ]
Pan, Jie [1 ]
机构
[1] Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Shandong, Peoples R China
[2] State Grid Jinan Power Supply Co, Jinan 250012, Shandong, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
pulsed dielectric barrier discharge; Ar/CF4 discharge plasma; particle density; reaction pathway; atmospheric-pressure discharge plasma; ELECTRON-TRANSPORT; THIN-FILMS; ARGON;
D O I
10.1088/1361-6463/aac3e7
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ar/CF4 discharge plasma etching is a promising approach to achieving a high etch rate and anisotropic etching. A 1D fluid model is established to numerically study the effects of CF4 content on particle densities and reaction pathways in Ar/CF4 pulsed dielectric barrier discharge plasma at atmospheric pressure. The simulation results indicate that, with increasing CF4 content, Ar+ densities decrease but the densities of other positive ions increase, and the electron densities do not undergo a dramatic change but the CF3- densities present an approximately linear increase. The densities of CF3 and F reach their maximums when the CF4 content is 70%. In Ar, the electron impacts with Ar are the essential reaction pathways to generate Ar+, Arm, and Ar*. In CF4, the electron impacts with CF4 are the main paths to produce CF4+, CF2+, CF+, F+, CF3-, CF2, F-2, CF3+, F-, CF3, and F. Besides, CF4+ -> CF3+ + F and CF3- + F -> CF3 (+) Fproduce part of CF+ 3 and F-. Decomposition, recombination, and charge exchange reactions all contribute to the generation of CF3 and F. In the Ar/CF4 mixture, Ar (+) CF3+ -> CF3 (+) Ar+ and CF4 (+) Ar+ -> CF3+ + F (+) Ar produce a great deal of Ar+, CF3+, CF3, and F. The contribution ratios of the reactions CF4 (+) e -> CF3 (+) F+ + 2e and F+ + CF+ -> F + CF continuously increase with increasing CF4 content.
引用
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页数:11
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