Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (100) thin films

被引：26
作者：
Tang, Z. Z. [1 ]
Liu, S. J. [1 ,2 ]
Singh, R. K. [1 ]
Bandyopadhyay, S. [1 ]
Sus, I. [1 ,3 ]
Kotani, T. [1 ]
van Schilfgaarde, M. [1 ]
Newman, N. [1 ]
机构：
[1] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
[2] Harbin Inst Technol, Div Engn & Mat Sci, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[3] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
来源：
ACTA MATERIALIA | 2009年 / 57卷 / 02期
关键词：
Ba(Zn1/3Ta2/3)O-3; Pulsed laser deposition; Optical/electrical properties; Ab initio electron theory; PULSED-LASER DEPOSITION; DIELECTRIC LOSS; NIOBATE FILMS; MICROWAVE; EVAPORATION; QUALITY;
D O I：
10.1016/j.actamat.2008.09.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O-3 (100) dielectric thin films grown on MgO (100) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O-3 films had an indirect optical hand gap of similar to 3.0 eV and a refractive index or 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O-3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O-3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm(-1)) and high temperatures (<200 degrees C) with an activation energy of 0.85 eV. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页码：432 / 440
页数：9
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