Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

被引：4

作者：

Chen, YH ^{[1
]}

Yang, Z ^{[1
]}

Wang, ZG ^{[1
]}

Xu, B ^{[1
]}

Liang, JB ^{[1
]}

Qian, JJ ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,LAB SEMICOND MAT SCI,BEIJING 100083,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.56.6770

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The in-plane optical anisotropy which comes from the heavy-hole and the light-holt transitions in InAs submonolayers inserted in a (311)-oriented GaAs matrix is studied by reflectance-difference spectroscopy (RDS). The steplike density of states obtained from RDS demonstrates that the ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only S-ML InAs. The degree of anisotropy is found to he independent of the layer coverage, and is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs submonolayer grown on a (311) GaAs surface.

引用

页码：6770 / 6773

页数：4

共 16 条

[1] ELECTRO-OPTIC EFFECTS IN THE OPTICAL ANISOTROPIES OF (001) GAAS [J].

ACOSTAORTIZ, SE ;

LASTRASMARTINEZ, A .

PHYSICAL REVIEW B, 1989, 40 (02) :1426-1429

[2] OPTICAL INVESTIGATION OF THE ELECTRONIC-STRUCTURE OF SINGLE ULTRATHIN INAS LAYERS GROWN PSEUDOMORPHICALLY ON (100) AND (311)A GAAS SUBSTRATES [J].

ALONSO, MI ;

ILG, M ;

PLOOG, KH .

PHYSICAL REVIEW B, 1994, 50 (03) :1628-1635

[3] ENERGY-LEVELS AND EXCITON OSCILLATOR STRENGTH IN SUBMONOLAYER INAS-GAAS HETEROSTRUCTURES [J].

BELOUSOV, MV ;

LEDENTSOV, NN ;

MAXIMOV, MV ;

WANG, PD ;

YASIEVICH, IN ;

FALEEV, NN ;

KOZIN, IA ;

USTINOV, VM ;

KOPEV, PS ;

TORRES, CMS .

PHYSICAL REVIEW B, 1995, 51 (20) :14346-14351

[4] EXCITONS IN INAS/GAAS SUBMONOLAYER QUANTUM-WELLS [J].

BRANDT, O ;

LAGE, H ;

PLOOG, K .

PHYSICAL REVIEW B, 1991, 43 (17) :14285-14288

[5] INITIAL-STAGES OF INAS EPITAXY ON VICINAL GAAS(001)-(2X4) [J].

BRESSLERHILL, V ;

LORKE, A ;

VARMA, S ;

PETROFF, PM ;

POND, K ;

WEINBERG, WH .

PHYSICAL REVIEW B, 1994, 50 (12) :8479-8487

[6] MORPHOLOGY TRANSFORMATIONS OF GAAS HIGH-INDEX SURFACES DURING THE INITIAL-STAGES OF STRAINED-LAYER OVERGROWTH [J].

ILG, M ;

NOTZEL, R ;

PLOOG, KH ;

HOHENSTEIN, M .

APPLIED PHYSICS LETTERS, 1993, 62 (13) :1472-1474

[7]

KAJIKAWA Y, 1995, J CRYST GROWTH, V150, P431, DOI 10.1016/0022-0248(94)00770-5

[8] REFLECTANCE-DIFFERENCE SPECTROSCOPY OF (001) GAAS-SURFACES IN ULTRAHIGH-VACUUM [J].

KAMIYA, I ;

ASPNES, DE ;

FLOREZ, LT ;

HARBISON, JP .

PHYSICAL REVIEW B, 1992, 46 (24) :15894-15904

[9] Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices [J].

Langbein, W ;

Luerssen, D ;

Kalt, H ;

Hvam, JM ;

Braun, W ;

Ploog, K .

PHYSICAL REVIEW B, 1996, 54 (15) :10784-10799

[10] TOPOGRAPHY OF HIGH-INDEX AND LOW-INDEX GAAS-SURFACES [J].

NOTZEL, R ;

DAWERITZ, L ;

PLOOG, K .

PHYSICAL REVIEW B, 1992, 46 (08) :4736-4743

← 1 2 →