Photoluminescence of GaAs(110) quantum wells modulated by surface acoustic waves

被引：1
作者：
Guang, Yang [1 ]
Santos, P. V.
机构：
[1] Huazhong Univ Sci & Technol, Sch Optoelect Sci & Engn, Wuhan 430074, Peoples R China
[2] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany
来源：
ACTA PHYSICA SINICA | 2006年 / 55卷 / 08期
关键词：
photoluminescence; GaAs quantum wells; surface acoustic waves; spin polarization;
D O I：
10.7498/aps.55.4327
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We studied the low temperature (15 K) photoluminescence properties of un-doped GaAs(110) quantum wells modulated by surface acoustic waves (SAW) by photoluminescence (PL) spectroscopy technique. Under the influence of the SAW, the decreasing of PL intensity and the splitting of the PL lines were observed. The magnitude of the splitting can be up to 10 meV when the power applied to the transducers is 20 dBm. Further-more, the spin injection in GaAs(110) quantum wells generated by circular polarization light under the influence of SAW was also discussed.
引用
收藏
页码：4327 / 4331
页数：5
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