On the problem of spurious patterns in neural associative memory models

被引:12
|
作者
Athithan, G [1 ]
Dasgupta, C [1 ]
机构
[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
来源
关键词
associative memory; asymmetric dilution; basin of attraction; learning rule; neural network; optimal learning; self-interaction; spurious pattern;
D O I
10.1109/72.641470
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
The problem of spurious patterns in neural associative memory models is discussed, Some suggestions to solve this problem from the literature are reviewed and their inadequacies are pointed out, A solution based on the notion of neural self-interaction with a suitably chosen magnitude is presented for the Hebb learning rule. For an optimal learning rule based on linear programming, asymmetric dilution of synaptic connections is presented as another solution to the problem of spurious patterns, With varying percentages of asymmetric dilution it is demonstrated numerically that this optimal learning rule leads to near total suppression of spurious patterns. For practical usage of neural associative memory networks a combination of the two solutions with the optimal learning rule is recommended to be the best proposition.
引用
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页码:1483 / 1491
页数:9
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