Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiNx/n-GaN MIS structures

被引：9
|
作者：
Ma, Xiaohua [1 ]
Liu, Ying [1 ]
Wang, Xinhua [2 ]
Huang, Sen [2 ]
Gao, Zhu [1 ]
Bao, Qilong [2 ]
Liu, Xinyu [2 ]
机构：
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 12期
基金：
中国国家自然科学基金;
关键词：
alloying temperatures; chemical vapor deposition; GaN; interface traps; SiNx; SILICON-NITRIDE FILMS; CHARGE-TRAPPING PROPERTIES; ELECTRICAL-PROPERTIES; THIN-FILMS; ATOMIC-HYDROGEN; STORAGE LAYERS; N-GAN; PLASMA; INTERFACE; PASSIVATION;
D O I：
10.1002/pssa.201532395
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The low-pressure chemical vapor deposition (LPCVD)-SiNx layer is deposited prior to the ohmic alloying as the passivation layer and gate dielectric layer in GaN device fabrication. The effect of alloying temperature on the LPCVD-SiNx/GaN interface and LPCVD-SiNx dielectric film is evaluated by the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The C-V analysis by frequency-dependent method and Terman method shows that the higher density of interface states occurs at the higher alloying temperature, while I-V analysis indicates that the higher alloying temperature can lead to smaller current density with slightly deeper traps for Poole-Frenkel conduction. The hydrogen-related bonds may be the cause and affects the interfacial properties of LPCVD-SiNx/GaN as well as the electrical properties of LPCVD-SiNx film. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2928 / 2935
页数：8
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