Molecular Dynamics Simulation of Dislocation Behavior in TiAl Intermetallic Compound

被引：0

作者：

Takeuchi, Shunichi ^{[1
]}

Kawamura, Takahiro ^{[1
]}

Suzuki, Yasuyuki ^{[1
]}

Kitashima, Tomonori ^{[2
]}

机构：

[1] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan

[2] Natl Inst Mat Sci, High Temp Mat Unit, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS | 2015年 / 79卷 / 08期

关键词：

titanium-aluminum intermetallic compound; dislocation; stacking fault; molecular dynamics; DEFORMATION; BOUNDARIES; ALLOY; SLIP;

D O I：

10.2320/jinstmet.J2015025

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

TiAl intermetallic compound has received much attention as a lightweight heat resistant material. Because mechanical property is affected by dislocation behavior, it is important to understand dislocation behavior in microscopic viewpoint. In this study, we simulated dislocation behavior in single phase gamma-TiAl and alpha(2)-Ti3Al using molecular dynamics method. From the results, we confirmed that perfect dislocation was divided into partial dislocations and stacking faults. We also investigated temperature dependence of dislocation behavior. We found that the dislocations at 1000 K moved less than those at 300 K.

引用

页码：413 / 418

页数：6

共 29 条

[1] STACKING FAULT ENERGY IN SILICON [J].