The polarization field in Al-rich AlGaN multiple quantum wells

被引：37

作者：

Guo, Qiang ^{[1
]}

Kirste, Ronny ^{[1
,2
]}

Mita, Seiji ^{[1
,2
]}

Tweedie, James ^{[1
,2
]}

Reddy, Pramod ^{[1
,2
]}

Washiyama, Shun ^{[1
]}

Breckenridge, M. Hayden ^{[1
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
,2
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA

[2] Adroit Mat, 2054 Kildaire Farm Rd,Suite 205, Cary, NC 27518 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SC期

关键词：

PIEZOELECTRIC FIELDS; WIDTH DEPENDENCE; EMISSION;

D O I：

10.7567/1347-4065/ab07a9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the quantum confined Stark effect in AlGaN multiple quantum well structures with a high Al content grown on single-crystalline AlN substrates. The quantitative relationship between the quantum well structure parameters, photogenerated carrier density, built-in electric field and ground-level emission is discussed. It is found that the electric field strength increases from 0.5 MV cm(-1) to almost 3 MV cm(-1) when the Al content in the quantum well barriers is increased from 65% to 100%, which is consistent with the theory of spontaneous and piezoelectric polarization in III-nitrides. In addition, the built-in electric field increases significantly with increasing barrier thickness. Based on these results, the electric field in an Al0.55Ga0.45N single quantum well with AlN cladding is predicted to be around 5 MV cm(-1). (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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