C-axis oriented Ba-ferrite thin film with small grain for perpendicular magnetic recording

被引:16
|
作者
Morisako, A
Shams, NN
Miura, Y
Matsumoto, M
Gee, SH
Park, MH
Hong, YK
机构
[1] Shinshu Univ, Dept Informat Engn, Nagano 3808553, Japan
[2] Univ Idaho, Dept Mat Sci & Engn, Moscow, ID 83844 USA
关键词
hexagonal ferrite film; perpendicular magnetic recording; small grain; sputtering;
D O I
10.1016/j.jmmm.2003.12.632
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hexagonal Ba-ferrite(BaM) thin films with amorphous AlO(a-AlO) under-layer were prepared by a facing targets sputtering system. The grain size of c-axis perpendicularly oriented BaM/a-AlO films is about 20 nm at the thickness of 20 nm for BaM layer. The perpendicular coercivity is about 3.5-4.3 kOe with BaM layer thickness in the range from 80 to 30 nm and 2.3 kOe for BaM layer thickness of 20 nm. The in-plane coercivity for BaM/a-AlO films was less than 0.1 kOe at the thickness ranging from 20 to 80 nm. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:2191 / 2193
页数:3
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