共 3 条
C-axis oriented Ba-ferrite thin film with small grain for perpendicular magnetic recording
被引:16
作者:
Morisako, A
Shams, NN
Miura, Y
Matsumoto, M
Gee, SH
Park, MH
Hong, YK
机构:
[1] Shinshu Univ, Dept Informat Engn, Nagano 3808553, Japan
[2] Univ Idaho, Dept Mat Sci & Engn, Moscow, ID 83844 USA
关键词:
hexagonal ferrite film;
perpendicular magnetic recording;
small grain;
sputtering;
D O I:
10.1016/j.jmmm.2003.12.632
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Hexagonal Ba-ferrite(BaM) thin films with amorphous AlO(a-AlO) under-layer were prepared by a facing targets sputtering system. The grain size of c-axis perpendicularly oriented BaM/a-AlO films is about 20 nm at the thickness of 20 nm for BaM layer. The perpendicular coercivity is about 3.5-4.3 kOe with BaM layer thickness in the range from 80 to 30 nm and 2.3 kOe for BaM layer thickness of 20 nm. The in-plane coercivity for BaM/a-AlO films was less than 0.1 kOe at the thickness ranging from 20 to 80 nm. (C) 2003 Elsevier B.V. All rights reserved.
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页码:2191 / 2193
页数:3
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