Structural and optical characteristics of Ge1-xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers

被引：32

作者：

Chen, Jia-Zhi ^{[1
,2
]}

Li, H. ^{[1
,2
]}

Cheng, H. H. ^{[1
,2
]}

Chang, Guo-En ^{[3
,4
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Natl Chung Cheng Univ, Dept Mech Engn, Minxiong 62102, Chiayi County, Taiwan

[4] Natl Chung Cheng Univ, Adv Inst Mfg High Tech Innovat, Minxiong 62102, Chiayi County, Taiwan

来源：

OPTICAL MATERIALS EXPRESS | 2014年 / 4卷 / 06期

关键词：

QUANTUM-WELL LASERS; ALLOYS; STRAIN;

D O I：

10.1364/OME.4.001178

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an investigation on low dimensional Ge1-xSnx/Ge heterostructures. A series of strained-layer Ge1-xSnx/Ge superlattices with various Sn contents up to a threshold value that affords a direct bandgap is achieved by the technique of low temperature growth using molecular beam epitaxy. The Sn composition, strain status, and crystallographic are systematically characterized by cross-sectional transmission electron microscope and x-ray diffraction. Optical absorption measurements were carried out at room temperature to determine the bandgap energies of the Ge1-xSnx/Ge superlattices. Analyzing the direct transition energies reveals the room-temperature quantum confinement in the Ge1-xSnx/Ge superlattices. Present investigation demonstrates the growth and the quantum confinement of Ge1-xSnx/Ge superlattices, moving an important step forward toward the development of high-performance photonic devices based on Sn-containing group-IV low-dimensional structures. (C) 2014 Optical Society of America

引用

页码：1178 / 1185

页数：8

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