Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures

被引：17
|
作者：
Takeyama, Mayumi B. [1 ]
Sato, Masaru [1 ]
Nakata, Yoshihiro [2 ]
Kobayashi, Yasushi [2 ]
Nakamura, Tomoji [2 ]
Noya, Atsushi [1 ]
机构：
[1] Kitami Inst Technol, Dept Elect & Elect Engn, Fac Engn, Kitami, Hokkaido 0908507, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 05期
基金：
日本学术振兴会;
关键词：
CHEMICAL-VAPOR-DEPOSITION; MAGNETRON; PECVD;
D O I：
10.7567/JJAP.53.05GE01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature deposition has been required for preparing SiNx films of high density, high refractive index, and low hydrogen content for various applications. We examine the characteristics of SiNx films deposited at low temperature by reactive sputtering and plasma-enhanced CVD under different conditions. The results reveal that we can give an outline of the preparation conditions that provide the properties of SiNx films required for various applications. The pretreatment of the Si target improves the properties of the sputter-deposited SiNx films by reducing the amount of oxygen incorporation. (C) 2014 The Japan Society of Applied Physics
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页数：3
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