Negative-tone polyphenol resist based on chemically-amplified polarity change reaction with sub-50 nm resolution capability

被引：3

作者：

Kyoko, Kojima ^{[1
]}

Takashi, Hattori

Fukuda, Hiroshi

Hirayama, Taku ^{[2
]}

Shiono, Daiju ^{[2
]}

Hada, Hideo ^{[2
]}

Onodera, Junichi ^{[2
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

[2] Tokyo Ohka Kogyo Co Ltd, Kanagawa 2530114, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2 | 2006年 / 6153卷

关键词：

negative-tone; polyphenol; polarity change; EB lithography; lactonization; resist;

D O I：

10.1117/12.656112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We designed a novel chemically-amplified negative-tone molecular-resist compound of 3M6C-MBSA-BL, which is a gamma-hydroxycarboxylated polyphenol (4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)] methyl]phenol (3M6C-MBSA)) for EB and EUV lithographies to be used in hp 45 and beyond technology nodes. After selection of photo acid generators (PAGs) and optimization of the concentration of PAG in the resist, we could demonstrate 40-nm line and space patterns resolution by EB exposure. Also dry-etching durability and 1-month shelf life at -20 degrees C were confirmed. Small line-edge roughness (LER) values of 4.5 nm (inspection length: L = 620 nm) and 6.2 nm (L = 1800 nm) were achieved using the 3M6C-MBSA-BL resist.

引用

页码：U264 / U271

页数：8

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