Spin accumulation and cotunneling effects in ferromagnetic single-electron transistors

被引：3
作者：
Martinek, J [1 ]
Barnas, J
Maekawa, S
Schoeller, H
Schön, G
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[3] Adam Mickiewicz Univ Poznan, Dept Phys, PL-61614 Poznan, Poland
[4] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[5] Rhein Westfal TH Aachen, Inst Theoret Phys A, D-52056 Aachen, Germany
[6] Univ Karlsruhe, Inst Theoret Festkoperphy, Karlsruhe, Germany
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 240卷 / 1-3期
关键词：
tunnel magnetoresistance; single-electron tunneling; Coulomb blockade;
D O I：
10.1016/S0304-8853(01)00766-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron tunneling through small metallic particles (islands) coupled to two ferromagnetic electrodes is studied theoretically in the Coulomb blockade regime, where higher order tunneling processes play a significant role. Transport characteristics of the system are analyzed by the real-time diagrammatic technique. It is shown that the spin splitting of the electrochemical potential due to spin accumulation on the island should be detectable from the spacing between two resonances in the current-voltage characteristics. (C) 2002 Elsevier Science B,V. All rights reserved.
引用
收藏
页码：143 / 145
页数：3
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