Semiconducting composite oxide Y2CuO4-5CuO thin films for investigation of photoelectrochemical properties

被引:19
作者
Ahmed, Sohail [1 ]
Mansoor, Muhammad Adil [1 ]
Mazhar, Muhammad [1 ]
Soehnel, Tilo [2 ,3 ]
Khaledi, Hamid [1 ]
Basirun, Wan Jefrey [4 ]
Arifin, Zainudin [1 ]
Abubakar, Shahzad [5 ]
Muhammad, Bakhtiar [6 ]
机构
[1] Univ Malaya, Fac Sci, Dept Chem, Kuala Lumpur 50603, Malaysia
[2] Univ Auckland, Sch Chem Sci, Auckland 1, New Zealand
[3] Massey Univ Auckland, New Zealand Inst Adv Study, Ctr Theoret Chem & Phys, Auckland, New Zealand
[4] Univ Malaya, Inst Postgrad Studies, Inst Nanotechnol & Catalysis NanoCat, Kuala Lumpur 50603, Malaysia
[5] Quaid I Azam Univ, Natl Ctr Phys, NS&CD, Islamabad 44000, Pakistan
[6] Hazara Univ, Dept Chem, Mansehra, Kpk, Pakistan
关键词
CHEMICAL-VAPOR-DEPOSITION; DEPROTONATED; 2-HYDROXYPYRIDINE; STRUCTURAL-CHARACTERIZATION; MAGNETIC-PROPERTIES; CRYSTAL-STRUCTURES; ANTIMONY SULFIDE; COMPLEXES; COPPER; PRECURSOR; BARIUM;
D O I
10.1039/c4dt00719k
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
An octa-nuclear heterobimetallic complex [Y2Cu6Cl0.7(dmae)(6)(OAc)(7.3)(OH)(4)(H2O)(2)]center dot 3H(2)O center dot 0.3CH(3)C(6)H(5) 1 (dmae = dimethylaminoethanoate; OAc = acetato) was synthesized, characterized by melting point analysis, elemental analysis, FT-IR, and single crystal X-ray diffraction analysis and implemented at 600 degrees C under an oxygen atmosphere for the deposition of Y2CuO4-5CuO composite thin films by aerosol assisted chemical vapor deposition (AACVD). The chemical composition and surface morphology of the deposited thin film have been determined by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis that suggest the formation of impurity-free crystallite mixtures of the Y2CuO4-5CuO composite, with well-defined evenly distributed particles in the size range of 19-24 nm. An optical band gap energy of 1.82 eV was estimated by UV-visible spectrophotometry. PEC studies show that under illumination with a 150 W halogen lamp and at a potential of 0.8 V, a photocurrent density of 9.85 mu A cm(-2) was obtained.
引用
收藏
页码:8523 / 8529
页数:7
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