Record-Breaking High-Power InGaN-Based Laser-Diodes Using Novel Thick-Waveguide Structure

被引：0

作者：

Kawaguchi, Masao ^{[1
]}

Imafuji, Osamu ^{[1
]}

Nozaki, Shinichiro ^{[1
]}

Hagino, Hiroyuki ^{[1
]}

Nakamura, Koshi ^{[1
]}

Takigawa, Shinichi ^{[1
]}

Katayama, Takuma ^{[1
]}

Tanaka, Tsuyoshi ^{[1
]}

机构：

[1] Panasonic Corp, Sensing Solut Dev Ctr, Automot & Ind Syst Co, Kadoma, Osaka, Japan

来源：

2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2016年

关键词：

High power; InGaN; laser diode; waveguide; optical-loss;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power operation over 7W in InGaN laser-diodes is achieved by an undoped thick-waveguide structure where an optical-loss is suppressed by reduced light-leakage to the absorbing p-cladding. Operating voltage increase due to the high-resistive undoped layer is successfully eliminated by utilizing the potential flattening effect of electrons reflected from electron-overflow-suppression layer.

引用

页数：2

共 5 条

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