Structure of Hafnium Silicate Films Formed by Atomic Layer Deposition

被引：2
作者：
Liu, J. [1 ]
Wu, X. [2 ]
Lennard, W. N. [1 ]
Landheer, D. [2 ]
机构：
[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
SPINODAL DECOMPOSITION; GATE DIELECTRICS; PHASE-SEPARATION; THIN-FILMS; SCATTERING; MIXTURE; POLYMER;
D O I：
10.1149/1.3206616
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Hf distributions in as-grown and annealed (HfO2)(0.25)(SiO2)(0.75) films with thicknesses in the range 4-13 nm were investigated by high resolution transmission electron microscopy (HRTEM), angle resolved X-ray photoelectron spectroscopy (ARXPS) and medium energy ion scattering (MEIS). HRTEM images show a layered structure in films thinner than 8 nm. ARXPS data also show a non-uniform distribution of Hf throughout the film depth. A diffusion of SiO2 to the film surface after a longer time anneal was observed by MEIS. All these observations provide evidence for surface-directed spinodal decomposition in the pseudobinary (HfO2)(x)(SiO2)(1-x) alloy system.
引用
收藏
页码：163 / 172
页数：10
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