UV-exposure effect on ferroelectricity of the sol-gel processed PZT thin film

The Pb(Zr0.52Ti0.48)O-3 thin films were fabricated by sol-gel method. A modified pyrolysis method, such as UV-photolysis process, was adapted before final annealing of the films. The UV-photolysis processed PZT thin films exhibited enhanced ferroelectricity (P-r) and lower leakage current density than not-treated one. UV-photolysis process also made it possible to lower the crystallization temperature and to stabilize film surface and interface. The interface states were characterized by Auger electron spectroscopy (AES). The fatigue and retention test were also examined. It is thought that the UV-treatment process is very effective to enhance ferroelectric and electrical properties for ferroelectric random access memory device applications.