Low-frequency noise characterization of very large value resistors

被引：22
作者：
Arnaboldi, C
Bucci, C
Cremonesi, O
Fascilla, A
Nucciotti, A
Pavan, M
Pessina, G
Pirro, S
Previtali, E
Sisti, M
机构：
[1] Ist Nazl Fis Nucl, I-20126 Milan, Italy
[2] Ist Nazl Fis Nucl, Lab Gran Sasso, I-67010 Assergi, AQ, Italy
[3] Univ Insubria, Como, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 04期
关键词：
high value resistors; noise; noise measurement; semiconductor device noise;
D O I：
10.1109/TNS.2002.801507
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple circuit configuration is described that allows one to characterize the noise of very large value resistors. With this measurement setup, we investigated, at different bias voltages, the low-frequency noise of large value resistors, tens of GOmega range, realized with different technologies. A technique is suggested that allows reducing the low-frequency noise contribution by optimizing the connecting arrangement. A short review of the resistor noise theory is given.
引用
收藏
页码：1808 / 1813
页数：6
相关论文
共 18 条
[1]   New experimental results on double beta decay of 130Te [J].
Alessandrello, A ;
Brofferio, C ;
Cremonesi, O ;
Fiorini, E ;
Giuliani, A ;
Nucciotti, A ;
Pavan, M ;
Pessina, G ;
Pirro, S ;
Previtali, E ;
Vanzini, M ;
Zanotti, L ;
Bucci, C ;
Pobes, C .
PHYSICS LETTERS B, 2000, 486 (1-2) :13-21
[2]   1-F NOISE FROM THERMAL FLUCTUATIONS IN METAL-FILMS [J].
CLARKE, J ;
VOSS, RF .
PHYSICAL REVIEW LETTERS, 1974, 33 (01) :24-27
[3]   A very simple method to measure the input capacitance and the input current of transistors [J].
Fascilla, A ;
Pessina, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 469 (01) :116-126
[4]   DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J].
HOOGE, FN .
PHYSICA, 1972, 60 (01) :130-+
[5]   CONTACT NOISE [J].
HOOGE, FN ;
HOPPENBR.AM .
PHYSICS LETTERS A, 1969, A 29 (11) :642-&
[6]   1/F NOISE SOURCES [J].
HOOGE, FN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1926-1935
[7]   1/F NOISE IS NO SURFACE EFFECT [J].
HOOGE, FN .
PHYSICS LETTERS A, 1969, A 29 (03) :139-&
[8]   ON THE NOISE OF HIGH-TRANSIMPEDANCE AMPLIFIERS FOR LONG-WAVELENGTH PULSE OTDRS [J].
HOWARD, RM ;
JEFFERY, RD ;
HULLETT, JL .
OPTICAL AND QUANTUM ELECTRONICS, 1987, 19 (02) :123-129
[9]   Ultralow noise high gain transimpedance amplifier for characterizing the low frequency noise of infrared detectors [J].
Howard, RM .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (03) :1860-1867
[10]   A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
HUNG, KK ;
KO, PK ;
HU, CM ;
CHENG, YC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :654-665
12