Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect

被引：12

作者：

Volodin, V. A. ^{[1
,2
]}

Mortet, V ^{[3
]}

Taylor, A. ^{[3
]}

Remes, Z. ^{[3
]}

Stuchlikova, T. H. ^{[3
]}

Stuchlik, J. ^{[3
]}

机构：

[1] Russian Acad Sci, Siberian Div, AV Rzhanov Inst Semicond Phys, Lavrenteva 13, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Pirogova St 2, Novosibirsk 630090, Russia

[3] Inst Phys ASCR, Vvi, Cukrovarnicka 10-112, Prague 16200 6, Czech Republic

来源：

SOLID STATE COMMUNICATIONS | 2018年 / 276卷

关键词：

Raman scattering; Diamond; Fano interference; SPECTROSCOPY; SPECTRA; SIZE;

D O I：

10.1016/j.ssc.2018.04.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman spectroscopy. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline grains and Fano interference effect due to the contribution of electron Raman scattering in heavily doped p-type diamond films. The increase of boron concentration led to decrease of the size of crystalline diamond grains. The films are semitransparent and have good conductivity, so that it can be used as transparent electrodes in giant-scale electronics and optoelectronics.

引用

页码：33 / 36

页数：4

共 29 条

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