Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers

被引：61

作者：

Smowton, PM ^{[1
]}

Pearce, EJ

Schneider, HC

Chow, WW

Hopkinson, M

机构：

[1] Cardiff Univ, Dept Phys & Astron, Cardiff CF24 3YB, S Glam, Wales

[2] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA

[3] Univ Sheffield, EPSRC Cent Facil Semicond 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期

关键词：

D O I：

10.1063/1.1516236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the near-field of broad-area lasers with quantum dot and quantum well active regions designed to emit at 1 mum. The quantum dot devices exhibit less filamentation than comparable quantum well devices, and exhibit a reduction in filamentation as the injection level is increased. This is consistent with a theory that includes the Coulomb coupling between dot and wetting-layer states on a microscopic level. The theory predicts a linewidth enhancement factor from -3 to 1, depending on carrier density and inhomogeneous broadening. (C) 2002 American Institute of Physics.

引用

页码：3251 / 3253

页数：3

共 10 条

[1] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[2] FILAMENTATION IN CONVENTIONAL DOUBLE HETEROSTRUCTURE AND QUANTUM WELL SEMICONDUCTOR-LASERS [J].

CHOW, WW ;

DEPATIE, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (07) :1297-1301

[3] High-power quantum-dot lasers at 1100 nm [J].

Heinrichsdorff, F ;

Ribbat, C ;

Grundmann, M ;

Bimberg, D .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :556-558

[4] High-performance 980 nm quantum dot lasers for high-power applications [J].

Klopf, F ;

Reithmaier, JP ;

Forchel, A ;

Collot, P ;

Krakowski, M ;

Calligaro, M .

ELECTRONICS LETTERS, 2001, 37 (06) :353-354

[5] Towards filament-free semiconductor lasers [J].

McInerney, JG ;

O'Brien, P ;

Skovgaard, P ;

Mullane, M ;

Houlihan, J ;

O'Neill, E ;

Moloney, JV ;

Indik, RA .

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 :376-386

[6] Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].

Newell, TC ;

Bossert, DJ ;

Stintz, A ;

Fuchs, B ;

Malloy, KJ ;

Lester, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529

[7]

Schneider HC, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.041310

[8] Many-body effects in the gain spectra of highly excited quantum-dot lasers [J].

Schneider, HC ;

Chow, WW ;

Koch, SW .

PHYSICAL REVIEW B, 2001, 64 (11)

[9] Optical mode loss and gain of multiple-layer quantum-dot lasers [J].

Smowton, PM ;

Herrmann, E ;

Ning, Y ;

Summers, HD ;

Blood, P ;

Hopkinson, M .

APPLIED PHYSICS LETTERS, 2001, 78 (18) :2629-2631

[10] 3.9W CW power from sub-monolayer quantum dot diode laser [J].

Zhukov, AE ;

Kovsh, AR ;

Mikhrin, SS ;

Maleev, NA ;

Ustinov, VM ;

Livshits, DA ;

Tarasov, IS ;

Bedarev, DA ;

Maximov, MV ;

Tsatsul'nikov, AF ;

Soshnikov, IP ;

Kop'ev, PS ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D .

ELECTRONICS LETTERS, 1999, 35 (21) :1845-1847

← 1 →