Induced Dielectric Modulated Tunnel Field Effect Transistor Biosensor (I-DMTFET): Proposal and Investigation

被引:0
|
作者
Kalra, Sumeet [1 ]
Kumar, Mamidala J. [1 ]
Dhawan, Anuj [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, New Delhi 110016, India
关键词
MOS-TRANSISTOR; DESIGN; IMPACT; FET; VARIABILITY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work introduces a novel biosensing device which utilizes the dielectric constant property of biomolecules to induce the electrostatic doping in the Dielectric Modulated Tunnel Field Effect Transistor biosensor. Using calibrated 3D TCAD simulations, the efficacy of the proposed device as a biosensor is shown. The dopant implantation-free approach results in simplified fabrication process with reduced thermal budget and hence, increased suitability to 3D integration and fabrication on glass or plastic substrates. The device is also expected to give tolerance against dopant fluctuations induced variability in the detection sensitivity.
引用
收藏
页码:97 / 100
页数:4
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