Stimulated emission from optically pumped GaN quantum dots

被引：73

作者：

Tanaka, S ^{[1
]}

Hirayama, H ^{[1
]}

Aoyagi, Y ^{[1
]}

Narukawa, Y ^{[1
]}

Kawakami, Y ^{[1
]}

Fujita, S ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT & ENGN,SAKYO KU,KYOTO 60601,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.119877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stimulated emission was observed from optically pumped GaN quantum dots in an AlxGa1-xN separate confinement heterostructure fabricated on 6H-SiC(0001) substrate by metal organic chemical vapor deposition. Nanostructural GaN quantum dots, with an average size of similar to 10 nm width, similar to 1-2 nm height, and density of similar to 10(11) cm(-2), were self-assembled on the AlxGa1-xN cladding layer surface. The stimulated emission peak was observed at similar to 3.48 eV, which is similar to 50 meV lower than that of spontaneous emission. The excitation power dependence on the emission intensity clearly indicates threshold pump power density of 0.75 MW/cm(2) for the onset of stimulated emission. (C) 1997 American Institute of Physics.

引用

页码：1299 / 1301

页数：3

共 19 条

[1] ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE [J].

AMANO, H ;

TANAKA, T ;

KUNII, Y ;

KATO, K ;

KIM, ST ;

AKASAKI, I .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1377-1379

[2] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J].

DINGLE, R ;

SHAKLEE, KL ;

LEHENY, RF ;

ZETTERSTROM, RB .

APPLIED PHYSICS LETTERS, 1971, 19 (01) :5-+

[3]

KAHN MA, 1991, APPL PHYS LETT, V58, P1515

[4] Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer [J].

Kawakami, Y ;

Peng, AG ;

Narukawa, Y ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1414-1416

[5] OPTICAL GAIN OF OPTICALLY PUMPED AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].

KIM, ST ;

AMANO, H ;

AKASAKI, I ;

KOIDE, N .

APPLIED PHYSICS LETTERS, 1994, 64 (12) :1535-1536

[6] STIMULATED INTRINSIC RECOMBINATION PROCESSES IN II-VI COMPOUNDS [J].

KOCH, SW ;

HAUG, H ;

SCHMIEDER, G ;

BOHNERT, W ;

KLINGSHIRN, C .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :431-440

[7] BIEXCITON LASING IN CUCL QUANTUM DOTS [J].

MASUMOTO, Y ;

KAWAMURA, T ;

ERA, K .

APPLIED PHYSICS LETTERS, 1993, 62 (03) :225-227

[8] An optically pumped GaN-AlGaN vertical cavity surface emitting laser [J].

Redwing, JM ;

Loeber, DAS ;

Anderson, NG ;

Tischler, MA ;

Flynn, JS .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :1-3

[9] Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy [J].

Schmidt, TJ ;

Yang, XH ;

Shan, W ;

Song, JJ ;

Salvador, A ;

Kim, W ;

Aktas, O ;

Botchkarev, A ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1820-1822

[10]

SHIONOYA S, 1995, KOTAI BUTSURI, V5, P438

← 1 2 →