Synthesis and photoluminescence properties of semiconductor nanowires

被引：45

作者：

Bai, ZG

Yu, DP ^{[1
]}

Wang, JJ

Zou, YH

Qian, W

Fu, JS

Feng, SQ

Xu, J

You, LP

机构：

[1] Peking Univ, Dept Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 72卷 / 2-3期

关键词：

nanowires; photoluminescense; crystalline core;

D O I：

10.1016/S0921-5107(99)00501-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) properties of the Si nanowires were investigated in correlation with the diameter of the crystalline core. Intensive light emission was observed peaking at dark red, green and blue regions for the as grown and partially oxidized SiNW samples. The red PL emission is ascribed to the quantum confinement effect of the crystalline core of the SiNWs, while the green and blue ones are attributed to the radiative recombination of the defect centers in the amorphous silicon oxide layer surrounding the SiNWs. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：117 / 120

页数：4

共 15 条

[1]

BAILAR JC, COMPREHENSIVE INORGA, V1

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].