Utilization of sputter depth profiling for the determination of band alignment at polycrystalline CdTe/CdS heterointerfaces

被引：36

作者：

Fritsche, J ^{[1
]}

Schulmeyer, T ^{[1
]}

Kraft, D ^{[1
]}

Thissen, A ^{[1
]}

Klein, A ^{[1
]}

Jaegermann, W ^{[1
]}

机构：

[1] TH Darmstadt, Inst Sci Mat, Div Surface Sci, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期

关键词：

D O I：

10.1063/1.1507830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band alignment at polycrystalline CdS/CdTe heterointerfaces for thin-film solar cells is determined by photoelectron spectroscopy from stepwise CdTe deposition on polycrystalline CdS substrates and from subsequent sputter depth profiling. Identical values of 0.94+/-0.05 eV for the valence band offset are obtained. (C) 2002 American Institute of Physics.

引用

页码：2297 / 2299

页数：3

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