Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction

被引：0

作者：

Freitas, Raul O. ^{[1
]}

Diaz, Beatriz ^{[2
]}

Abramof, Eduardo ^{[2
]}

Quivy, Alain A. ^{[1
]}

Morelhao, Sergio L. ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-01498 Sao Paulo, Brazil

[2] Inst Nacl Pesquisas Espaciais, BR-12201 Sao Jose Dos Campos, Brazil

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 08期

关键词：

GROWTH; SYSTEM; GAAS;

D O I：

10.1002/pssa.200881605

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution X-ray diffractometry is used to probe the nature of a diffraction-peak broadening previously noticed in quantum dots (QDs) systems with freestanding InAs islands on top of GaAs (001) substrates [Freitas et al., Phys. Status Solidi (A) 204, 2548 (2007)]. The procedure is hence extended to further investigate the capping process of InAs/GaAs QDs. A direct correlation is established between QDs growth rates and misorientation of lattice-planes at the samples surfaces. This effect provides an alternative too] for studying average strain fields on QDs systems in standard triple axis diffractometers running on X-ray tube sources, which are much more common than synchrotron facilities. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1714 / 1717

页数：4

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