Optimisation of on-chip amplifiers for charge coupled devices

被引：0

作者：

Roy, JN ^{[1
]}

Kullar, SS ^{[1
]}

Das Gupta, S ^{[1
]}

Singh, DN ^{[1
]}

机构：

[1] Semicond Complex Ltd, SAS Nagar 160059, Punjab, India

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The main purpose of the on-chip amplifier in a CCD image sensor is to act as an interface between the floating diffusion, where the charge-to-voltage conversion takes place and the off-chip circuitry. In this paper; a two-stage source follower amplifier optimised for visible imager CCDs developed at Semiconductor Complex Limited (SCL) has been presented and its design criteria discussed. Three source follower amplifier configurations were designed and fabricated. Major layout issues have been discussed. The effect of design variables such as transistor sizes and transistor types and of biasing conditions on gain, output, impedance and power consumption of the amplifiers have been studied in detail.

引用

页码：557 / 562

页数：6

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