Recent developments in magnetron sputtering

被引:0
|
作者
Yu Xiang [1 ]
Wang Chengbiao
Liu Yang
Yu Deyang
Xing Tingyan
机构
[1] China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
[2] Power Technol Co Ltd, Beijing 100072, Peoples R China
[3] China Univ Geosci, Sch Informat Engn, Beijing 100083, Peoples R China
关键词
balanced and unbalanced magnetron sputtering; mid-frequency magnetron sputtering; ion assisted sputtering;
D O I
暂无
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The principle of magnetron sputtering is introduced and the balanced and unbalanced magnetrons are compared and the necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growing importance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films.
引用
收藏
页码:337 / 343
页数:7
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