Surface functionalization by low-energy electron processing of molecular ices
被引:2
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作者:
Lafosse, A.
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机构:
Univ Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
CNRS, Collis Atom & Mol Lab, UMR 8625, F-91405 Orsay, FranceUniv Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
Lafosse, A.
[1
,2
]
Bertin, M.
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机构:
Univ Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
CNRS, Collis Atom & Mol Lab, UMR 8625, F-91405 Orsay, FranceUniv Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
Bertin, M.
[1
,2
]
Hoffman, A.
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机构:
Technion Israel Inst Technol, Dept Chem, IL-32000 Haifa, IsraelUniv Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
Hoffman, A.
[3
]
Azria, R.
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机构:
Univ Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
CNRS, Collis Atom & Mol Lab, UMR 8625, F-91405 Orsay, FranceUniv Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
Azria, R.
[1
,2
]
机构:
[1] Univ Paris 11, Collis Atom & Mol Lab, F-91405 Orsay, France
[2] CNRS, Collis Atom & Mol Lab, UMR 8625, F-91405 Orsay, France
[3] Technion Israel Inst Technol, Dept Chem, IL-32000 Haifa, Israel
Surface chemistry;
Electron interaction;
Induced reactions;
Functionalization reaction;
High resolution electron energy loss spectroscopy (HREELS);
Hydrogenated diamond;
Dissociative electron attachment;
SCATTERING CROSS-SECTION;
HYDROGEN-PASSIVATED SI;
DIAMOND THIN-FILMS;
RESONANCES;
DAMAGE;
OXIDATION;
DNA;
CO;
ACETONITRILE;
LITHOGRAPHY;
D O I:
10.1016/j.susc.2008.10.062
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Low-energy electron processing of condensed molecular films (also called ices) is an efficient method to induce functionalization of a substrate, and thereby to modify and adjust its electronic and chemical properties. This method takes advantage of a resonant mechanism specific to low-energy electrons (by opposition to photons), the dissociative electron attachment (DEA), the key process allowing the chemical selectivity to be directly and easily controlled by the kinetic energy of the processing electrons. The functionalization procedure is described and illustrated by high resolution electron energy loss spectroscopy (HREELS) results on the induced anchoring of CH2CN organic chains on synthetic diamond by electron irradiation at 2 eV of condensed acetonitrile. The range of application of the proposed functionalization method is worth to be extended to other organic/inorganic interfaces, such as organic layers on metallic and semiconducting substrates. (C) 2009 Elsevier B.V. All rights reserved.
机构:
Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
Kochi Univ Technol, Inst Nanotechnol, Kochi 7828502, JapanKobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
Nitta, Noriko
Aizawa, Yohta
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Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, JapanKobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
Aizawa, Yohta
Hasegawa, Tokiya
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机构:
Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
Toppan Printing Co Ltd, Tokyo, JapanKobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
Hasegawa, Tokiya
Yasuda, Hidehiro
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机构:
Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
Osaka Univ, Res Ctr Ultra High Voltage Electron Microscopy, Osaka, JapanKobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
机构:
Sun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Sun Moon Univ, CNST, Asan 336708, Chungnam, South KoreaSun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Kim, Ho Seob
Ahn, Seungjoon
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机构:
Sun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Sun Moon Univ, CNST, Asan 336708, Chungnam, South KoreaSun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Ahn, Seungjoon
Kim, Dae Wook
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机构:
Sun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Sun Moon Univ, CNST, Asan 336708, Chungnam, South KoreaSun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Kim, Dae Wook
Oh, Tae-Sik
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机构:
Sun Moon Univ, Dept Elect Engn, Asan 336708, Chungnam, South KoreaSun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea
Oh, Tae-Sik
Ahn, Seong Joon
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机构:
Sun Moon Univ, Div I&C Engn, Asan 336708, Chungnam, South KoreaSun Moon Univ, Dept Phys, Asan 336708, Chungnam, South Korea