Reliability of 1300 nm laser diode for space applications.

被引:3
|
作者
Pailharey, E [1 ]
Baggio, J [1 ]
D'hose, C [1 ]
Musseau, O [1 ]
机构
[1] CEA, DAM, DIF, F-91680 Bruyeres Le Chatel, France
来源
PHOTONICS FOR SPACE AND RADIATION ENVIRONMENTS | 1999年 / 3872卷
关键词
laser diodes; transient effects; laser simulation; heavy ions; single event effect (SEE); bit error rate (BER);
D O I
10.1117/12.373278
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
The use of electro-optic devices for high speed digital links in space on-board systems or high bandwidth analogue links for diagnostics in large physics experiments could be limited by their reliability in radiative environment. The technology of emitters, and specially the laser diodes, is in rapid progress, driven by ground applications such as telecommunication systems. New structures created to increase performances introduce radiation sensitive areas. In space applications, particles (protons, heavy ions) can induce permanent damages as well as transient errors. Thus it is of major interest to study the vulnerability of new laser diodes structure to single particles and determine their role in the reliability of st whole data link. A transmission data link has been simulated using a high speed digital signal to modulate a 1300 nm laser diode. A Nd:YAG laser was used to simulate ionizing effects induced by transient particle irradiation on the laser diode by creating carriers only in the laser cavity. With this method, calibration of ionizing effects, error amplitude and influence of operational parameters of the link (frequency, amplitude of modulation...) have been studied. Heavy ions at different energies have been used to confirm transient effects, but the perturbation duration, too short compared with the Nd:YAG, have limited observation of the transient error due to ionizing effects. Permanent damages have been observed and their origin linked with the particle.
引用
收藏
页码:139 / 147
页数:9
相关论文
共 50 条
  • [11] Latest developments in AlGaInN laser diode technology for defence applications.
    Najda, S. P.
    Perlin, P.
    Suski, T.
    Marona, L.
    Bockowski, M.
    Leszczynski, M.
    Wisniewski, P.
    Czernecki, R.
    Kucharski, R.
    Targowski, G.
    ELECTRO-OPTICAL REMOTE SENSING, PHOTONIC TECHNOLOGIES, AND APPLICATIONS VI, 2012, 8542
  • [12] Absolute power measurements at wavelengths of 1300 nm and 1550 nm with a cryogenic radiometer and a tuneable laser diode
    Corredera, P
    Hernanz, ML
    Campos, J
    Corróns, A
    Pons, A
    Fontecha, JL
    METROLOGIA, 2000, 37 (05) : 519 - 522
  • [13] Reliability evaluation of thermally actuated micromachined relays for space applications.
    Teverovsky, A
    Sharma, AK
    RELIABILITY, TESTING, AND CHARACTERIZATION OF MEMS/MOEMS II, 2003, 4980 : 12 - 21
  • [14] Physical mechanisms involved during transient irradiation of a 1300 nm laser diode.
    Pailharey, E
    Baggio, J
    D'hose, C
    Musseau, O
    FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1999, : 444 - 449
  • [15] Physical mechanisms involved during transient irradiation of a 1300 nm laser diode.
    Pailharey, E
    Baggio, J
    D'hose, C
    Musseau, O
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (03) : 682 - 687
  • [16] Qualification of Laser Diode Arrays for Space Applications
    Troupaki, Elisavet
    Vasilyev, Aleksey A.
    Stephen, Mark A.
    Seas, Antonios A.
    Kashem, Nasir B.
    SOLID STATE LASERS XVIII: TECHNOLOGY AND DEVICES, 2009, 7193
  • [17] Diode laser cavity ringdown spectroscopy for on-line monitoring applications.
    Winstead, CB
    Molen, GM
    Scherer, ST
    Srivastava, AC
    Singh, JP
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 220 : U6 - U6
  • [18] Chaos-control algorithm targets laser-diode applications.
    不详
    LASER FOCUS WORLD, 1999, 35 (11): : 13 - 13
  • [19] Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications
    Rehioui, Othman
    Bechou, Laurent
    Fillardet, Thierry
    Kohl, Andreas
    Ousten, Yves
    Volluet, Gerard
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VIII, 2010, 7583
  • [20] High reliability level demonstrated on 980nm laser diode
    Van de Casteele, J
    Laffitte, D
    Gelly, G
    Starck, C
    Bettiati, M
    MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1751 - 1754