Programmability of nanowire networks

被引:32
作者
Bellew, A. T. [1 ,2 ]
Bell, A. P. [1 ,2 ]
McCarthy, E. K. [1 ,2 ]
Fairfield, J. A. [1 ,2 ]
Boland, J. J. [1 ,2 ]
机构
[1] Univ Dublin Trinity Coll, Sch Chem, Dublin 2, Ireland
[2] Univ Dublin Trinity Coll, Ctr Res Adapt Nanostruct & Nanodevices, Dublin 2, Ireland
基金
欧洲研究理事会; 爱尔兰科学基金会;
关键词
RESISTIVE SWITCHING MEMORIES; CORE-SHELL NANOWIRES; HIGHLY TRANSPARENT; NIO FILMS; CONDUCTIVITY; FABRICATION; MECHANISMS; MODEL; SKIN;
D O I
10.1039/c4nr02338b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electrical connectivity in networks of nanoscale junctions must be better understood if nanowire devices are to be scaled up from single wires to functional material systems. We show that the natural connectivity behaviour found in random nanowire networks presents a new paradigm for creating multifunctional, programmable materials. In devices made from networks of Ni/NiO core shell nanowires at different length scales, we discover the emergence of distinct behavioural regimes when networks are electrically stressed. We show that a small network, with few nanowire nanowire junctions, acts as a unipolar resistive switch, demonstrating very high ON/OFF current ratios (>10(5)). However, large networks of nanowires distribute an applied bias across a large number of junctions, and thus respond not by switching but instead by evolving connectivity. We demonstrate that these emergent properties lead to fault tolerant materials whose resistance may be tuned, and which are capable of adaptively reconfiguring under stress. By combining these two behavioural regimes, we demonstrate that the same nanowire network may be programmed to act both as a metallic interconnect, and a resistive switch device with high ON/OFF ratio. These results enable the fabrication of programmable, multi-functional materials from random nanowire networks.
引用
收藏
页码:9632 / 9639
页数:8
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