High lateral resolution 2D mapping of the B/C ratio in a boron carbide film formed by ferntosecond pulsed laser deposition

被引:15
作者
Simon, A.
Csako, T.
Jeynes, C.
Szorenyi, T.
机构
[1] Hungarian Acad Sci, Inst Nucl Res, ATOMKI, H-4001 Debrecen, Hungary
[2] Univ Szeged, Dept Opt & Quantum Elect, H-6701 Szeged, Hungary
[3] Univ Surrey, Ion Beam Ctr, Guildford GU2 7XH, Surrey, England
[4] Univ Szeged, Hungarian Acad Sci, Res Grp Laser Phys, H-6701 Szeged, Hungary
基金
英国工程与自然科学研究理事会;
关键词
Rutherford backscattering spectrometry; pulsed laser deposition; boron carbide; microbeam; thickness profile; chemical composition;
D O I
10.1016/j.nimb.2006.03.030
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Boron carbide films with a thickness of up to 550 nm and deposit size of 40 mm x 30 min were prepared by ablating a B4C target in high vacuum by pulses of 700 A duration at 248 nm. Layer thickness and lateral distribution of the constituting elements along the symmetry axes of a deposit were investigated with Rutherford backscattering spectrometry (RBS) with a focussed 2.5 MeV He+ ion beam. RBS spectra were fitted with the DataFurnace computer code. The results of 2D mapping proved that both the elemental composition and the film thickness of the deposit were non-uniform. The B/C similar to 1 ratio measured at the edge of the deposit increased up to about three toward the centre, with both the B content and the B/C ratio varying linearly with the film thickness. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:454 / 457
页数:4
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