Investigation on the properties of molecular beam deposited ZnSe films

被引:11
作者
Huang, Chia-Wei [1 ]
Weng, Hsuan-Mei [2 ]
Jiang, Yeu-Long [2 ]
Ueng, Herng-Yih [1 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 804, Taiwan
[2] Natl Chung Hsing Univ, Grad Inst Optoelect Engn, Taichung 402, Taiwan
关键词
ZnSe; MBD; Glass substrate; Growth rate; OPTICAL-PROPERTIES; THIN-FILMS; ELECTRICAL-PROPERTIES; GROWTH; LAYER; GAAS; MORPHOLOGY; GLASS;
D O I
10.1016/j.tsf.2009.01.085
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular beam deposition was used to deposit high quality zinc selenide (ZnSe) thin film on glass substrate at various substrate temperatures and Se/Zn beam equivalent pressure ratios. The best growth condition was identified by analyzing characteristics such as the full width at half-maximum and peak intensity of the (111) preferred orientation in X-ray diffraction patterns. The dependence of lattice constant, growth rate, film composition and optical property on a variety of growth parameters was discussed in detail to identify how the quality of ZnSe film can be improved. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3667 / 3671
页数:5
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