Fabrication of Sb2Te3 and Bi2Te3 multilayer composite films by Atomic Layer Deposition

被引：5

作者：

Zhang, Kai ^{[1
,2
]}

Nminibapiel, David ^{[1
,2
]}

Tangirala, Madhavi ^{[1
,2
]}

Baumgart, Helmut ^{[1
,2
]}

Kochergin, Vladimir ^{[3
]}

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] Jefferson Natl Accelerator Facil, Appl Res Ctr, Jefferson, VA 23606 USA

[3] MicroXart Inc, Christiansburg, VA 24073 USA

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 8 | 2012年 / 50卷 / 13期

关键词：

THERMOELECTRIC FIGURE; MERIT;

D O I：

10.1149/05013.0003ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Atomic Layer Deposition (ALD) growth of antimony telluride Sb2Te3 and bismuth telluride Bi2Te3 multilayer composite films has been investigated. We have fabricated Sb2Te3 and Bi2Te3 thin films using (trimethylsilyl) telluride ((Me3Si)(2)Te), bismuth trichloride (BiCl3) and antimony trichloride (SbCl3) as precursors for telluride, bismuth and antimony respectively. Both metal tellurides exhibit Volmer Weber Island growth mode and have characteristic hexagonal crystallites, which are telluride terminated at the surface making chemisorption rather challenging. We found that the presence of OH - bonds at the surface promotes ALD thin film growth by providing suitable nucleation sites and prevents delamination of the hexagonal platelet shaped crystallites. The use of longer exposure times of precursors during the ALD process increases chemisorptions and interface oxidation aids in the creation of nucleation sites. We present surface morphology studies using FE-SEM analysis.

引用

页码：3 / 9

页数：7

共 4 条

[1] EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT [J].