Dielectric relaxation mechanisms of BiMn2O5 ceramics

被引：33
作者：
Lin, Y. Q. [1 ]
Wu, Y. J. [1 ]
Chen, X. M. [1 ]
Gu, S. P. [1 ]
Tong, J. [1 ]
Guan, S. [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期
基金：
美国国家科学基金会;
关键词：
annealing; bismuth compounds; dielectric relaxation; ferroelectric ceramics; hopping conduction; multiferroics; vacancies (crystal); MAGNETIC-FIELDS; FERROELECTRICITY; MULTIFERROICS; POLARIZATION;
D O I：
10.1063/1.3080248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dielectric properties of multiferroic BiMn2O5 ceramics were evaluated over broad temperature and frequency ranges. Two Debye-type dielectric relaxations were observed at low temperatures (130-250 K) and high temperatures (200-450 K), respectively. The low temperature relaxation with an activation energy of 0.18 eV was attributed to charge carrier hopping process between Mn3+ and Mn4+. The high temperature dielectric relaxation with an activation energy of 0.38 eV, which is similar to the activation energy of conductivity, was associated with oxygen vacancies related defect complex. The dielectric response at high temperatures was significantly suppressed and the dc conductivity increased after oxygen annealing.
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页数：5
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  • [11] Magnetic and dielectric properties of Tb0.5Ca0.5MnO3
    Hiramitsu, Yusuke
    Yoshii, Kenji
    Yoneda, Yasuhiro
    Mizuki, Jun'ichiro
    Nakamura, Akio
    Shimojo, Yutaka
    Ishii, Yoshinobu
    Morii, Yukio
    Ikeda, Naoshi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10B): : 7171 - 7174
  • [12] Coupling between the ferroelectric and antiferromagnetic orders in YMnO3
    Huang, ZJ
    Cao, Y
    Sun, YY
    Xue, YY
    Chu, CW
    [J]. PHYSICAL REVIEW B, 1997, 56 (05): : 2623 - 2626
  • [13] Electric polarization reversal and memory in a multiferroic material induced by magnetic fields
    Hur, N
    Park, S
    Sharma, PA
    Ahn, JS
    Guha, S
    Cheong, SW
    [J]. NATURE, 2004, 429 (6990) : 392 - 395
  • [14] Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe2O4
    Ikeda, N
    Ohsumi, H
    Ohwada, K
    Ishii, K
    Inami, T
    Kakurai, K
    Murakami, Y
    Yoshii, K
    Mori, S
    Horibe, Y
    Kitô, H
    [J]. NATURE, 2005, 436 (7054) : 1136 - 1138
  • [15] Features of the magnetoelectric behavior of the family of multiferroics RMn2O5 at high magnetic fields (Review)
    Kadomtseva, A. M.
    Krotov, S. S.
    Popov, Yu. F.
    Vorob'ev, G. P.
    [J]. LOW TEMPERATURE PHYSICS, 2006, 32 (8-9) : 709 - 724
  • [16] Magnetic control of ferroelectric polarization
    Kimura, T
    Goto, T
    Shintani, H
    Ishizaka, K
    Arima, T
    Tokura, Y
    [J]. NATURE, 2003, 426 (6962) : 55 - 58
  • [17] Magnetic structure and properties of BiMn2O5 oxide:: A neutron diffraction study -: art. no. 144423
    Muñoz, A
    Alonso, JA
    Casais, MT
    Martínez-Lope, MJ
    Martínez, JL
    Fernández-Díaz, MT
    [J]. PHYSICAL REVIEW B, 2002, 65 (14): : 1 - 8
  • [18] THEORETICAL BASIS AND GENERAL APPLICABILITY OF THE COUPLING MODEL TO RELAXATIONS IN COUPLED SYSTEMS
    NGAI, KL
    WANG, YN
    MAGALAS, LB
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 1994, 211 : 327 - 332
  • [19] Distribution of Mn3+ and Mn4+ species between octahedral and square pyramidal sites in Bi2Mn4O10-type structure
    Nguyen, N
    Legrain, M
    Ducouret, A
    Raveau, B
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 1999, 9 (03) : 731 - 734
  • [20] Effect of Ce substitution on magnetic and dielectric properties of BiMn2O5
    Sun, Z. H.
    Cheng, B. L.
    Dai, S.
    Jin, K. J.
    Zhou, Y. L.
    Lu, H. B.
    Chen, Z. H.
    Yang, G. Z.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
123