1.0-10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

被引:4
作者
Acharyya, Aritra [1 ]
机构
[1] Cooch Behar Govt Engn Coll, Dept Elect & Commun Engn, Ghughumari 736170, W Bengal, India
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 07期
关键词
avalanche response time; avalanche transit time; graphene nanoribbons; IMPATT; terahertz; MULTISTAGE SCATTERING PHENOMENA; IMPACT IONIZATION RATE; CHARGE-CARRIERS; DIODES; MODEL; RATES; TECHNOLOGY; SILICON; REGION; OSCILLATORS;
D O I
10.1002/pssa.201800730
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The possibilities of terahertz frequency generation by using graphene nanoribbon (GNR) based avalanche transit time (ATT) sources are investigated in this paper. The most promising candidate of ATT device family, i.e., the impact avalanche transit time (IMPATT) diode is chosen for the present study. Parallel connected GNR based IMPATT structures with inherent power combining capability are proposed and simulated by using self-consistent quantum drift-diffusion model based in-house simulation codes in order to study the static, high frequency and noise performance of those at different millimeter-wave and terahertz frequency bands. The detailed study reveals that the in-build power combined GNR IMPATT sources are capable of performing more efficiently than the IMPATT sources based on some other popular semiconductor materials as well as some state-of-the-art terahertz radiators within the terahertz frequency band from 1 to 10 THz.
引用
收藏
页数:13
相关论文
共 93 条
  • [1] Optical and magneto-optical far-infrared properties of bilayer graphene
    Abergel, D. S. L.
    Fal'ko, Vladimir I.
    [J]. PHYSICAL REVIEW B, 2007, 75 (15):
  • [2] Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors
    Acharyya, Aritra
    Chatterjee, Subhashri
    Das, Adrija
    Banerjee, Apala
    Pandey, Aditya Raj
    Yadav, Aloke
    Banerjee, J. P.
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (01) : 34 - 39
  • [3] Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
    Acharyya, Aritra
    Goswami, Jayabrata
    Banerjee, Suranjana
    Banerjee, J. P.
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2015, 14 (01) : 309 - 320
  • [4] A generalized analytical model based on multistage scattering phenomena for estimating the impact ionization rate of charge carriers in semiconductors
    Acharyya, Aritra
    Banerjee, J. P.
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (04) : 917 - 924
  • [5] Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
    Acharyya, Aritra
    Banerjee, J. P.
    [J]. APPLIED NANOSCIENCE, 2014, 4 (01) : 1 - 14
  • [6] Quantum drift-diffusion model for IMPATT devices
    Acharyya, Aritra
    Chatterjee, Subhashri
    Goswami, Jayabrata
    Banerjee, Suranjana
    Banerjee, J. P.
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (03) : 739 - 752
  • [7] Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz
    Acharyya, Aritra
    Chakraborty, Jit
    Das, Kausik
    Datta, Subir
    De, Pritam
    Banerjee, Suranjana
    Banerjee, J. P.
    [J]. INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2013, 5 (05) : 567 - 578
  • [8] GAAS IMPATT DIODES FOR 60 GHZ
    ADLERSTEIN, MG
    [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 97 - 98
  • [9] [Anonymous], J PHYS C
  • [10] [Anonymous], LECT NOTES