A Prospective Design Methodology of MMIC 2-6 GHz Low Noise Amplifier

被引：0

作者：

Kumar, Chanakya ^{[1
]}

Wekhande, Renuka ^{[2
]}

机构：

[1] SharadChandra Pawar Coll Engn, Elect & Telecommun Dept, Pune, Maharashtra, India

[2] SharadChandra Pawar Coll Engn, ME 2 Year VLSI & Embedded Syst Design, Pune, Maharashtra, India

来源：

2014 INTERNATIONAL CONFERENCE ON POWER, AUTOMATION AND COMMUNICATION (INPAC) | 2014年

关键词：

LNA; SDR; RF; GaAs; MMIC; Wideband; WIDE-BAND;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A wideband low noise amplifier is suitable for an emerging architecture such as a SDR and Digital RF. The gallium arsenide process has an advantage of very low noise figure at very high frequency. In this article we have taken efforts to propose a new concept for a wideband highly linear low noise amplifier. The simulations are carried out using Agilent Advanced Design System ADS to analyze the behavior of LNA in 2GHz to 6GHz band. The simulated results have shown an acceptable behavior with a maximum gain of 31 dB and low NF.

引用

页码：89 / 92

页数：4

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