Investigation of strain-induced modulation on electronic properties of graphene field effect transistor

被引：12

作者：

Dong, Jinyao ^{[1
]}

Liu, Shuai ^{[1
]}

Fu, Yongzhong ^{[1
]}

Wang, Quan ^{[1
,2
]}

机构：

[1] Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Beijing 100864, Peoples R China

来源：

PHYSICS LETTERS A | 2017年 / 381卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Graphene; Internal strain; Raman properties; Electrical properties;

D O I：

10.1016/j.physleta.2016.11.003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Graphene has been considered as a single sheet with sp(2)-bonded carbon atoms arranged in a two-dimensional honeycomb configuration. In our work, we demonstrate few-layer graphene field effect transistor (GFET) suspending on Si/SiO2 and utilize Raman spectroscope to characterize the strain effects of suspended graphene. We find that red shift appears in Raman G peak and 2D peak because of tensile strain on the graphene surface. Besides, we also measure output characteristic curves (I-sd-V-sd) and transfer characteristic curves (I-sd-Vg) in a four-probe configuration. Based on the out-put curves of GFET, the resistances of graphene without strain and with strain are equal to similar to 28 x 10(3) Omega and similar to 31 x 10(3) Omega, respectively. Combined with the tensile strain value of the graphene calculated by the Raman spectrum, the graphene piezo-resistive sensitivity coefficient GF = similar to 21. These results provide a theoretical basis for the preparation of high-performance graphene electronic components. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：292 / 297

页数：6

共 29 条

[1] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[2] Atomistic simulations of mechanical properties of graphene nanoribbons [J].

Bu, Hao ;

Chen, Yunfei ;

Zou, Min ;

Yi, Hong ;

Bi, Kedong ;

Ni, Zhonghua .

PHYSICS LETTERS A, 2009, 373 (37) :3359-3362

[3] Raman fingerprint of charged impurities in graphene [J].

Casiraghi, C. ;

Pisana, S. ;

Novoselov, K. S. ;

Geim, A. K. ;

Ferrari, A. C. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[4] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[5] Approaching ballistic transport in suspended graphene [J].

Du, Xu ;

Skachko, Ivan ;

Barker, Anthony ;

Andrei, Eva Y. .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :491-495

[6] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[7] Raman Spectroscopy and Kelvin Probe Force Microscopy characteristics of the CVD suspended graphene [J].

Gajewski, Krzysztof ;

Goniszewski, Stefan ;

Szumska, Anna ;

Moczala, Magdalena ;

Kunicki, Piotr ;

Gallop, John ;

Klein, Norbert ;

Hao, Ling ;

Gotszalk, Teodor .

[8] Effect of surface roughness on adhesion of graphene membranes [J].

Gao, Wei ;

Huang, Rui .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (45)

[9] Contact doping, Klein tunneling, and asymmetry of shot noise in suspended graphene [J].

Laitinen, Antti ;

Paraoanu, G. S. ;

Oksanen, Mika ;

Craciun, Monica F. ;

Russo, Saverio ;

Sonin, Edouard ;

Hakonen, Pertti .

PHYSICAL REVIEW B, 2016, 93 (11)

[10]

Lau C. N., 2012, MATER TODAY, V15, P6

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