Quantum pumping of valley current in strain engineered graphene

被引：43
作者：
Wang, Jing [1 ,2 ,3 ,4 ]
Chan, K. S. [2 ,3 ,4 ]
Lin, Zijing [1 ]
机构：
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Ctr Funct Photon, Hong Kong, Hong Kong, Peoples R China
[4] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期
关键词：
ELECTRON PUMP; TRANSPORT;
D O I：
10.1063/1.4861119
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices. (C) 2014 AIP Publishing LLC.
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页数：5
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