Quantum pumping of valley current in strain engineered graphene

被引：43
作者：
Wang, Jing [1 ,2 ,3 ,4 ]
Chan, K. S. [2 ,3 ,4 ]
Lin, Zijing [1 ]
机构：
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Ctr Funct Photon, Hong Kong, Hong Kong, Peoples R China
[4] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期
关键词：
ELECTRON PUMP; TRANSPORT;
D O I：
10.1063/1.4861119
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices. (C) 2014 AIP Publishing LLC.
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页数：5
相关论文
共 37 条
  • [1] How to detect a genuine quantum pump effect in graphene?
    Benjamin, Colin
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (04)
  • [2] Resonant tunnelling and negative differential conductance in graphene transistors
    Britnell, L.
    Gorbachev, R. V.
    Geim, A. K.
    Ponomarenko, L. A.
    Mishchenko, A.
    Greenaway, M. T.
    Fromhold, T. M.
    Novoselov, K. S.
    Eaves, L.
    [J]. NATURE COMMUNICATIONS, 2013, 4
  • [3] Scattering approach to parametric pumping
    Brouwer, PW
    [J]. PHYSICAL REVIEW B, 1998, 58 (16) : 10135 - 10138
  • [4] Strain-controlled electron switch in graphene
    Cao, Zhen-Zhou
    Cheng, Yan-Fu
    Li, Guan-Qiang
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (25)
  • [5] The electronic properties of graphene
    Castro Neto, A. H.
    Guinea, F.
    Peres, N. M. R.
    Novoselov, K. S.
    Geim, A. K.
    [J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
  • [6] Connolly MR, 2013, NAT NANOTECHNOL, V8, P417, DOI [10.1038/nnano.2013.73, 10.1038/NNANO.2013.73]
  • [7] Electronic transport in two-dimensional graphene
    Das Sarma, S.
    Adam, Shaffique
    Hwang, E. H.
    Rossi, Enrico
    [J]. REVIEWS OF MODERN PHYSICS, 2011, 83 (02) : 407 - 470
  • [8] Nanospintronics Based on Magnetologic Gates
    Dery, Hanan
    Wu, Hui
    Ciftcioglu, Berkehan
    Huang, Michael
    Song, Yang
    Kawakami, Roland
    Shi, Jing
    Krivorotov, Ilya
    Zutic, Igor
    Sham, Lu J.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (01) : 259 - 262
  • [9] Valley filter in strain engineered graphene
    Fujita, T.
    Jalil, M. B. A.
    Tan, S. G.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (04)
  • [10] Fully valley-polarized electron beams in graphene
    Garcia-Pomar, J. L.
    Cortijo, A.
    Nieto-Vesperinas, M.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (23)
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