Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

被引：32

作者：

Bayram, C. ^{[1
]}

Pere-laperne, N. ^{[1
]}

McClintock, R. ^{[1
]}

Fain, B. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 12期

关键词：

aluminium compounds; gallium compounds; III-V semiconductors; MOCVD; optical communication; semiconductor growth; semiconductor superlattices; wide band gap semiconductors; MULTIPLE-QUANTUM WELLS; MU-M; OPTICAL-PROPERTIES; WAVELENGTH; ABSORPTION; EPITAXY; ALN;

D O I：

10.1063/1.3104857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices (SLs) with intersubband (ISB) transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Effects of barrier- and well-doping on the ISB absorption are reported.

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页数：3

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