Contact engineering for 2D materials and devices

被引:640
作者
Schulman, Daniel S. [1 ]
Arnold, Andrew J. [2 ]
Das, Saptarshi [3 ]
机构
[1] Penn State Univ, Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Elect Engn, University Pk, PA 16802 USA
[3] Penn State Univ, Engn Sci & Mech, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; FEW-LAYER; MONOLAYER MOS2; METAL CONTACTS; GRAPHENE DEVICES; BAND-GAP; RESISTANCE; SCHOTTKY; INTERFACE; MOBILITY;
D O I
10.1039/c7cs00828g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Over the past decade, the field of two-dimensional (2D) layered materials has surged, promising a new platform for studying diverse physical phenomena that are scientifically intriguing and technologically relevant. Contacts are the communication links between these 2D materials and the three-dimensional world for probing and harnessing their exquisite electronic properties. However, fundamental challenges related to contacts often limit the ultimate performance and potential of 2D materials and devices. This article provides a comprehensive overview of the basic understanding and importance of contacts to 2D materials and various strategies for engineering and improving them. In particular, we elucidate the phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts, among others. Finally, we also discuss some of the relatively under-addressed and unresolved issues, such as contact scaling, and conclude with a future outlook.
引用
收藏
页码:3037 / 3058
页数:22
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