Improved interfacial property by small molecule ethanediamine for high performance inverted planar perovskite solar cells

被引：14

作者：

Zhang, Guodong ^{[1
,2
]}

Zhang, Yunxin ^{[2
]}

Chen, Siqi ^{[2
]}

Chen, Hao ^{[2
]}

Liu, Le ^{[2
]}

Ding, Wenming ^{[1
]}

Wang, Jinhui ^{[1
]}

Zhang, Anyu ^{[1
]}

Pang, Shuping ^{[2
]}

Guo, Xin ^{[3
]}

Yu, Lianqing ^{[1
]}

Jiu, Tonggang ^{[2
]}

机构：

[1] China Univ Petr, Sch Mat Sci & Engn, Qingdao 266580, Shandong, Peoples R China

[2] Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Shandong, Peoples R China

[3] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Liaoning, Peoples R China

来源：

JOURNAL OF ENERGY CHEMISTRY | 2021年 / 54卷

基金：

中国国家自然科学基金;

关键词：

Improved interfacial property; Inverted planar perovskite solar cells; Passivated trap states; Crystallinity; Ethanediamine; HOLE-TRANSPORT LAYER; HIGH-EFFICIENCY; CONJUGATED POLYELECTROLYTE; HALIDE PEROVSKITES; PASSIVATION; VOLTAGE;

D O I：

10.1016/j.jechem.2020.06.029

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

We report a simple and effective method to realize desirable interfacial property for inverted planar perovskite solar cells (PSCs) by using small molecule ethanediamine for the construction of a novel polyelectrolyte hole transport material (P3CT-ED HTM). It is found that P3CT-ED can not only improve the hole transport property of P3CT-K but also improve the crystallinity of adjacent perovskite film. In addition, the introduction of ethanediamine into P3CT realigns the conduction and valence bands upwards, passivates surface defects and reduces non-radiative recombination. As a consequence, compared to P3CT-K hole transport layer (HTL) based devices, the average power conversion efficiency (PCE) is boosted from 17.2% to 19.6% for the counterparts with P3CT-ED, with simultaneous enhancement in open circuit voltage and fill factor. The resultant device displays a champion PCE of 20.5% with negligible hysteresis. (C) 2020 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by ELSEVIER B.V. and Science Press. All rights reserved.

引用

页码：467 / 474

页数：8

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