Transient Evolution of Mechanical and Electrical Effects in Microelectromechanical Switches Subjected to Long-Term Stresses

被引：9
作者：
Barbato, Marco [1 ]
Cester, Andrea [1 ]
Mulloni, Viviana [2 ]
Margesin, Benno [2 ]
Meneghesso, Gaudenzio [1 ]
机构：
[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[2] Fdn Bruno Kessler, I-38123 Trento, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期
关键词：
Electrical failure mechanism; long-term stresses; mechanical failure mechanism; reliability; RF MEMS; RF MEMS SWITCHES; RELIABILITY;
D O I：
10.1109/TED.2015.2479578
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Application of two different biasing waveforms in long-term stresses in RF MEMS switches is used to separate mechanical and electrical effects. Three different effects are shown: 1) permanent mechanical degradation (creep effect) after the first stress and relaxation period; 2) transient mechanical degradation (viscoelastic recoverable mechanism); and 3) transient electrical degradation (recoverable charge trapping). Such effects are extracted by monitoring the evolution of the actuation and release voltages in different RF MEMS switches subjected to dc biasing and recovery tests. This paper highlights the mechanical and the electrical degradation components in long-term stress tests with the aim of quantifying the weights of the different contributions.
引用
收藏
页码：3825 / 3831
页数：7
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