Photoluminescence of GeSi/Si(001) self-assembled islands with dome and hut shape

被引：7

作者：

Novikov, AV ^{[1
]}

Shaleev, MV ^{[1
]}

Lobanov, DN ^{[1
]}

Yablonsky, AN ^{[1
]}

Vostokov, NV ^{[1
]}

Krasilnik, ZF ^{[1
]}

机构：

[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 3-4期

关键词：

self-assembled islands; photoluminescence; dome-island; hut-cluster;

D O I：

10.1016/j.physe.2003.12.138

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photoluminescence spectra of GeSi/Si (0 0 1) self-assembled islands produced by solid source molecular beam epitaxy in a wide range (460-700degreesC) of growth temperatures were investigated. The results showed a blue shift of the island-related photoluminescence peak with a growth temperature lowering from 600degreesC to 550degreesC. The observed blue shift of the island photo luminescence peak is associated with a sharp decrease in the average height of the island, which occurs through a change of its shape from dome to hut as the growth temperature lowers from 600degreesC to 550degreesC. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：416 / 420

页数：5

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