DESIGN CONSIDERATIONS FOR IN0.52AL0.48AS BASED AVALANCHE PHOTODIODES

被引：0

作者：

Mun, S. C. Liew Tat ^{[1
]}

Tan, C. H. ^{[1
]}

Marshall, A. R. J. ^{[1
]}

Goh, Y. L. ^{[1
]}

Tan, L. J. J. ^{[1
]}

David, J. P. R. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

avalanche photodiodes; excess noise factor; impact ionization; In(0.52)Al(0.48)As; Monte Carlo modeling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We provide a set of design considerations for In(0.52)Al(0.48)As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mu m and 2.0 mu m, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p(+)-n-n(+) doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mu m and 2.0 mu m respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p(+)-i-n(+) diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p(+) cladding regions have negligible effect on the excess noise factors.

引用

页码：331 / 333

页数：3

共 9 条

[1] Excess avalanche noise in In0.52Al0.48As [J].

Goh, Y. L. ;

Marshall, A. R. J. ;

Massey, D. J. ;

Ng, J. S. ;

Tan, C. H. ;

Hopkinson, M. ;

David, J. P. R. ;

Jones, S. K. ;

Button, C. C. ;

Pinches, S. M. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (5-6) :503-507

[2] Avalanche multiplication in InAlAs [J].

Goh, Y. L. ;

Massey, D. J. ;

Marshall, A. R. J. ;

Ng, J. S. ;

Tan, C. H. ;

Ng, W. K. ;

Rees, G. J. ;

Hopkinson, A. ;

David, J. P. R. ;

Jones, S. K. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (01) :11-16

[3]

MARSHALL ARJ, 19 ANN M LEOS C 2006

[4] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[5]

MUN SCL, 2007, NEW APPROACH SIMPLE

[6] 10Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure [J].

Nakata, T ;

Takeuchi, T ;

Watanabe, I ;

Makita, K ;

Torikai, T .

ELECTRONICS LETTERS, 2000, 36 (24) :2033-2034

[7] Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy [J].

Otsuka, N ;

Kito, M ;

Ishino, M ;

Matsui, Y ;

Toujou, F .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4239-4247

[8] The effect of an electric-field gradient on avalanche noise [J].

Plimmer, SA ;

Tan, CH ;

David, JPR ;

Grey, R ;

Li, KF ;

Rees, GJ .

APPLIED PHYSICS LETTERS, 1999, 75 (19) :2963-2965

[9] EFFECT OF DEAD SPACE ON THE EXCESS NOISE FACTOR AND TIME RESPONSE OF AVALANCHE PHOTODIODES [J].

SALEH, BEA ;

HAYAT, MM ;

TEICH, MC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) :1976-1984

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