MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

被引：8

作者：

Schroeter, D. ^{[1
]}

Steinki, N. ^{[1
]}

Schilling, M. ^{[1
]}

Scarioni, A. Fernandez ^{[2
]}

Krzysteczko, P. ^{[2
]}

Dziomba, T. ^{[2
]}

Schumacher, H. W. ^{[2
]}

Menzel, D. ^{[1
]}

Suellow, S. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Phys Kondensierten Mat, D-38106 Braunschweig, Germany

[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2018年 / 30卷 / 23期

关键词：

nanostructures; MnSi; growth; magnetoresistance; Hall effect; SKYRMION LATTICE; MAGNETORESISTANCE; MAGNETIZATION; ELECTRON; DRIVEN; METALS;

D O I：

10.1088/1361-648X/aabf5c

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a comparative study of the (magneto) transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

引用

页数：13

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