Characterization of stepwise flash-evaporated CuInSe2 films

被引：12

作者：

Malar, P ^{[1
]}

Das, VD ^{[1
]}

Kasiviswanathan, S ^{[1
]}

机构：

[1] Indian Inst Technol, Thin Film Lab, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

VACUUM | 2004年 / 75卷 / 01期

关键词：

CuInSe2; thin films; flash evaporation; transmission electron microscopy;

D O I：

10.1016/j.vacuum.2003.12.154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInSe2 (CIS) films were deposited by stepwise flash evaporation from polycrystalline powder source onto glass substrates held at various temperatures ranging from 100 to 560 K. The phase purity and microstructure were analyzed by transmission electron microscopy. The investigations show that films grown at 300 K and below were amorphous, whereas those grown at 370 K and above were polycrystalline in nature. The grain size in polycrystalline films were found to improve with increase in substrate temperature and during post-deposition annealing. The films had near stoichiometric composition as revealed by Rutherford backscattering spectrometry. Analysis of the optical transmittance spectra of CIS films deposited at 520 K yielded a Value of similar to0.97 eV for the fundamental band gap. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：39 / 49

页数：11

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