Wetting and adhesion of Si on Si3N4 and BN substrates

被引：61

作者：

Drevet, B. ^{[1
]}

Voytovych, R. ^{[2
]}

Israel, R. ^{[1
,2
]}

Eustathopoulos, N. ^{[2
]}

机构：

[1] CEA INES RDI, LITEN DTS LCS, F-73377 Le Bourget Du Lac, France

[2] INPG, SIMAP ENSEEG, F-38402 St Martin Dheres, France

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2009年 / 29卷 / 11期

关键词：

Interfaces; Nitrides; SILICON-NITRIDE; MOLTEN SILICON; GROWTH; BEHAVIOR; FILMS;

D O I：

10.1016/j.jeurceramsoc.2009.01.024

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wetting, adhesion and reactivity are the principal factors determining the capability of a solid to be used as mould material. In this work wetting of silicon and boron nitrides by molten silicon is studied in neutral gas atmosphere by the sessile drop technique at temperatures close to the silicon melting point. Adhesion is qualified by the behaviour of solidified droplets under the effect of then-no-mechanical stresses generated during cooling at room temperature. The reactivity at silicon/nitride interfaces is studied by scanning electron microscopy and EDX-microanalysis. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：2363 / 2367

页数：5

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