Nucleation and growth mechanisms of interfacial Al4C3 in Al/diamond composites

被引：63

作者：

Che, Zifan ^{[1
,2
]}

Zhang, Yang ^{[1
]}

Li, Jianwei ^{[1
]}

Zhang, Hailong ^{[1
]}

Wang, Xitao ^{[1
]}

Sun, Ce ^{[2
]}

Wang, Jinguo ^{[2
]}

Kim, Moon J. ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 657卷

关键词：

Metal matrix composites (MMCs); Aluminum carbide; Nucleation; Growth; Microstructure; Orientation relationship; ENHANCED THERMAL-CONDUCTIVITY; COATED DIAMOND PARTICLES; METAL-MATRIX COMPOSITES; DIAMOND/ALUMINUM COMPOSITES; PRESSURE INFILTRATION; ALUMINUM; MICROSTRUCTURE; TI; OPTIMIZATION; TEMPERATURE;

D O I：

10.1016/j.jallcom.2015.10.075

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Controlling the nucleation and growth of interfacial Al4C3 carbide to optimize interfacial microstructure is well accepted as a critical factor to improve thermal properties of Al/diamond composites. In this study, the nucleation and growth mechanisms of Al4C3 carbide have been studied. The inhomogeneous nucleation of Al4C3 is revealed on both diamond (100) and (111) surfaces ((100)(D) and (111)(D) surfaces). Al4C3 particles nucleate at (111)(D) facets on both (111)(D) and (100)(D) surfaces. Growth of Al4C3 particles is controlled by diffusion and Ostwald ripening. The proposed mechanisms well explain the observation of high density and small flower-like carbide on (100)(D) surface and less dense larger plate shape carbide on (111) D surface. The orientation relationship between diamond and Al4C3 was identified to be [1 (1) over bar0](D)//[2 (11) over bar0](Al4C3) and (111)(D)//(0003)(Al4C3) on both diamond surfaces. Our results will provide guidance to the further improvement of properties of Al/diamond composites. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：81 / 89

页数：9

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